MB4M [BL Galaxy Electrical]

SILICON BRIDGE RECTIFIERS; 硅桥式整流器
MB4M
型号: MB4M
厂家: BL Galaxy Electrical    BL Galaxy Electrical
描述:

SILICON BRIDGE RECTIFIERS
硅桥式整流器

文件: 总2页 (文件大小:112K)
中文:  中文翻译
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GALAXY ELECTRICAL  
MB2M - - - MB10M  
BL  
VOLTAGE RANGE: 200 --- 1000 V  
CURRENT: 0.5 A  
SILICON BRIDGE RECTIFIERS  
FEATURES  
MBM  
This series is UL recognized under Component Index,  
file number E239431  
4.6± 0.2  
Glass passivated chip junctions  
Plastic materrial has U/L flammabilityclassification  
94V-O  
High surge overload rating: 35A peak  
Saves space on printed circuit boards  
High temperature soldering guaranteed:  
260°C/10 seconds at 5 lbs. (2.3kg) tension  
5.5± 0.2  
3.8± 0.2  
MECHANICAL DATA  
Case: Molded plastic bodyover passivated junctions  
Terminals: Plated leads solderable per MIL-STD-750,  
Method 2026  
0.3± 0.1  
0.6± 0.1  
Polarity: Polaritysymbols marked on body  
Dimensions in inches and (millimeters)  
Mounting Position: Any  
6.0± 0.2  
2.5± 0.25  
Weight: 0.0078 ounce, 0.22 gram  
Dimensions in millimeters  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25  
ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
MB2M  
MB4M  
MB6M  
MB8M  
MB10M  
UNITS  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
1000  
Maximum DC blocking voltage  
Maximum average forw ard  
(1)  
0.5  
A
IF(AV)  
(2)  
0.8  
output current  
@TA=25  
Peak forw ard surge current  
8.3ms single half-sine-w ave  
superimposed on rated load  
IFSM  
A
V
35  
Maximum instantaneous forw ard voltage  
@ 0.4 A  
VF  
1.0  
Maximum reverse current  
@TA=25  
5.0  
100  
13  
IR  
μA  
at rated DC blocking voltage @TA=125  
pF  
Typical junction capacitance per leg (NOTE 3)  
CJ  
Typical thermal resistance per leg (NOTE 1)  
R θJA  
R θJL  
85  
20  
/W  
Operating junction temperature range  
Storage temperature range  
- 55 ---- + 150  
TJ  
TSTG  
- 55 ---- + 150  
www.galaxycn.com  
NOTES: (1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3mm) pads  
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20mm) mounted on 0.05 x 0.05" (1.3 x 1.3mm) solder pad  
(3) Measured at 1.0 MHz and applied reverse v oltage of 4.0 Volts  
BLGALAXY ELECTRICAL  
1.  
Document Number 0287128  
RATINGS AND CHARACTERISTIC CURVES  
MB2M---MB10M  
FIG.2 -- MAXIMUM NON-REPETITIVE PEAK FORWARD  
SURGE CURRENT PER LEG  
FIG.1 -- DERATING CURVE FOR OUTPUT  
RRECTIFIED CURRENT  
35  
TA=40  
SINGLE HALF SINE-WAVE  
30  
0.8  
(JEDEC Method)  
Aluminum Substrate  
25  
20  
0.7  
GLASS  
EPOXY  
f=60Hz  
0.6  
P.C.B.  
15  
0.5  
0.4  
0.3  
f=50Hz  
10  
1.0 CYCLE  
5.0  
0.2  
0
1
10  
100  
0.1  
RESISTIVE OR INDUCTIVE LOAD  
0
0
30  
60  
90  
120  
150  
NUMBER OF CYCLES AT 60Hz  
AMBIENT TEMPERATURE,  
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC  
100  
TJ=125  
10  
FIG.3 -- TYPICAL FORWARD VOLTAGE  
KKKKCHARACTERISTICS PER LEG  
1.0  
0.1  
TJ=25  
10  
.01  
0
20  
40  
60  
80  
100  
1
TJ=25  
PERCENT OF RATED PEAK REVERSE VOLTAGE,%  
0.1  
PULSE WIDTH=300µS  
FIG.5 -- TYPICAL JUNCTION CAPACITANCE PER  
BBBBBBB ELEMENT  
0.01  
0.2 0.4 0.6  
100  
0.8 1.0  
1.2 1.4  
60  
f=1MHz  
TJ=25  
40  
20  
10  
INSTANTANEOUS FORWARD VOLTAGE, VOLTS  
4
2
1
.1 .2  
.4  
1.0  
2
4
10 20 40  
100  
REVERSE VOLTAGE, VOLTS  
www.galaxycn.com  
BLGALAXY ELECTRICAL  
Document Number 0287128  
2.  

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